Diodes DNLS350E User Manual
Dnls350e, Features, Mechanical data
DNLS350E
Document number: DS31231 Rev. 3 - 2
1 of 5
April 2009
© Diodes Incorporated
DNLS350E
LOW V
NPN SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Complementary PNP Type Available (DPLS350E)
•
Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
• Case:
SOT-223
•
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
•
Weight: 0.115 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
6 V
Peak Pulse Collector Current
I
CM
5 A
Continuous Collector Current
I
C
3 A
Peak Pulse Base Current
I
BM
1 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 3) @ T
A
= 25°C
P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
R
θJA
125 °C/W
Power Dissipation (Note 4) @ T
A
= 25°C
P
D
2 W
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
R
θJA
62.5 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our websit3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at
4. Device mounted on FR-4 PCB with 1inch
2
copper pad layout.
Top View
Device Schematic
Pin Out Configuration
4
3
2
1
C
C
B
E
3
1
2,4
COLLECTOR
EMITTER
BASE