Dmjt9435 new prod uc t, Dmjt9435 – Diodes DMJT9435 User Manual
Page 3
DMJT9435
Document number: DS31622 Rev. 2 - 2
3 of 4
December 2008
© Diodes Incorporated
DMJT9435
NEW PROD
UC
T
10
100
1,000
1
10
100
1,000
10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical DC Current Gain vs. Collector Current
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V
= -1V
CE
0.001
0.01
0.1
1
10
1
10
100
1,000
10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V
,
C
O
LL
E
C
T
O
R
-E
M
IT
T
E
R
S
A
T
URA
T
ION
CE
(S
A
T
)
VO
L
T
A
G
E
(
V)
I /I = 10
C B
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
1
10
100
1,000
10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
-V
, BASE
-EM
IT
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (
V
)
BE
(O
N
)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V
= -4V
CE
1
10
100
1,000
10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
-V
, BA
SE-
E
M
IT
T
E
R
SA
T
U
R
A
T
IO
N
V
O
L
T
A
G
E (
V
)
BE
(S
A
T
)
0
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I
= 10
C B
/I
0.1
1
10
100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
1
10
100
1,000
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
ibo
C
obo
f = 1MHz
0
10
20
30
40
50
60
70
80
90 100
-I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
1
10
100
1,000
f,
G
A
IN-
BA
NDW
ID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V
= -10V
f = 100MHz
CE