Diodes FZT949 - Manual

SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - NOVEMBER 1995
FEATURES
* Extremely low equivalent on-resistance; R
CE(sat)
* 6 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* Excellent h
FE
characteristics specified upto 20 Amps
PARTMARKING DETAILS — DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT948 FZT949 UNIT
Collector-Base Voltage V
CBO
-40 -50 V
Collector-Emitter Voltage V
CEO
-20 -30 V
Emitter-Base Voltage V
EBO
-6 V
Peak Pulse Current I
CM
-20 A
Continuous Collector Current I
C
-6 -5.5 A
Power Dissipation at T
amb
=25°C P
tot
3 W
Operating and Storage Temperature
Range T
j
:Tstg -55 to +150 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT948
FZT949
C
C
E
B
TBA