Diodes FZT968 User Manual
Fzt968, Typical characteristics, Absolute maximum ratings
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) POWER TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; R
CE(sat)
44m
Ω
at 5A
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage
PARTMARKING DETAIL FZT968
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
CM
-20
A
Continuous Collector Current
I
C
-6
A
Power Dissipation at T
amb
=25°C
P
tot
3
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-15
-28
V
I
C
=-100
µ
A
V
(BR)CEO
-12
-20
V
I
C
=-10mA*
V
(BR)EBO
-6
-8
V
I
E
=-100
µ
A
Collector Cut-Off Current
I
CBO
-10
-1.0
nA
µ
A
V
CB
=-12V
V
CB
=-12V, T
amb
=100°C
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-65
-132
-360
-130
-170
-450
mV
mV
mV
I
C
=-500mA, I
B
=-5mA*
I
C
=-2A, I
B
=-50mA*
I
C
=-6A, I
B
=-250mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1050 -1200 mV
I
C
=-6A, I
B
=-250mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-870
-1050 mV
I
C
=-6A, V
CE
=-1V*
Static Forward Current
Transfer Ratio
h
FE
300
300
200
150
450
450
300
240
50
1000
I
C
=-10mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-1V*
Transition Frequency
f
T
80
MHz
I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
obo
161
pF
V
CB
=-20V, f=1MHz
Switching Times
t
on
t
off
120
116
ns
ns
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 294
FZT968
C
C
E
B
1m
100
1m
100
1m
100
0.1
100
100
1m
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
0.4
0.8
+25 °C
-55 °C
800
400
+100 °C
0
I
C
- Collector Current (A)
h
FE
v I
C
+25 °C
+100 °C
1.4
0.7
-55 °C
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
+25 °C
-55 °C
+100 °C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
+100 °C
+25 °C
0
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1s
100ms
100
DC
0.1
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
µ
s
V
+-
=1V
+25 °C
I
+
/I
*
=50
V
+-
=1V
-55 °C
I
+
/I
*
=50
10m
100m
1
10
0.2
0.6
I
+
/I
*
=10
I
+
/I
*
=50
I
+
/I
*
=100
I
+
/I
*
=200
I
+
/I
*
=250
0.8
0.6
0.4
0.2
0
1m
10m
100m
1
10
100
10m
100m
1
10
200
600
10m
100m
1
10
0.4
0.8
1.2
1.6
10m
100m
1
10
1
10
1
10
TYPICAL CHARACTERISTICS
3 - 295
FZT968