Diodes FZT869 - Manual

FZT869
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 2 - JANUARY 1996
FEATURES
* Extremely low equivalent on-resistance; R
CE(sat)
36m Ω at 5A
* 7 Amp continuous collector current (20 Amp peak)
* Very low saturation voltages
* Excellent gain charateristics specified upto 20 Amp
* P
tot
=3 Watts
PARTMARKING DETAILS - FZT869
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
25 V
Emitter-Base Voltage V
EBO
6 V
Peak Pulse Current I
CM
20 A
Continuous Collector Current I
C
7 A
Power Dissipation at T
amb
=25°C P
tot
3 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
FZT869
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
60 120 V I
C
=100 µ A
Collector-Emitter Breakdown
Voltag
V
(BR)CER
60 120 V I
C
=1 µ A, RB ≤ 1k Ω
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
25 35 V I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6 8 V I
E
=100 µ A
Collector Cut-Off Current I
CBO
50
1
nA
µ A
V
CB
=50V
V
CB
=50V, T
amb
=100°C
Collector Cut-Off Current I
CER
R ≤ 1k Ω
50
1
nA
µ A
V
CB
=50V
V
CB
=50V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
10 nA V
EB
=6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
35
67
168
50
110
215
350
mV
mV
mV
mV
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=6.5A, I
B
=150mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.2 V I
C
=6.5A, I
B
=300mA
Base-Emitter Turn-On Voltage V
BE(on)
1.13 V I
C
=6.5A, V
CE
=1V*
Static Forward
Current Transfer Ratio
h
FE
300
300
200
40
450
450
300
100
I
C
=10mA, V
CE
=1V
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=2V*
Transition Frequency f
T
100 MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output Capacitance C
obo
70 pF V
CB
=10V, f=1MHz*
Switching Times t
on
t
off
60
680
ns
ns
I
C
=1A, I
B1
=100mA
I
B2
=100mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
C
C
E
B
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