Electrical characteristics, Fzt749, A product line of diodes incorporated – Diodes FZT749 User Manual
Page 4
FZT749
Document Number DS33162 Rev. 5 - 2
4 of 7
May 2013
© Diodes Incorporated
FZT749
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-35 —
—
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 11)
BV
CEO
-25 —
—
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 — —
V
I
E
= -100µA
Collector Cut-off Current
I
CBO
— <1
-100
nA
V
CB
= -30V
— — -10 µA
V
CB
= -30V, T
AMB
= +100°C
Emitter Cut-off Current
I
EBO
— <1 -100 nA
V
EB
= -5.6V
Collector-Emitter Saturation Voltage (Note 11)
V
CE(SAT)
— -0.12 -0.3
V
I
C
= -1A, I
B
= -100mA
— -0.40 -0.6
I
C
= -3A, I
B
= -300mA
Base-Emitter Saturation Voltage (Note 11)
V
CE(SAT)
— -0.9 -1.25 V
I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-On Voltage (Note 11)
V
BE(ON)
— -0.8 -1.0 V
I
C
= -1A, V
CE
= -2V
DC Current Gain (Note 11)
h
FE
70 200 —
—
I
C
= -50mA, V
CE
= -2V
100 200 300
I
C
= -1A, V
CE
= -2V
75 570 —
I
C
= -2A, V
CE
= -2V
15 50 —
I
C
= -6A, V
CE
= -2V
Current Gain-Bandwidth Product (Note 11)
f
T
100
160 — MHz
V
CE
= -5V, I
C
= -100mA
f = 100MHz
Turn-On Time
t
on
— 40 — ns
V
CC
= -10V, I
C
= -500mA
I
B1
= I
B2
= -50mA
Turn-Off Time
t
off
— 450 — ns
Output Capacitance (Note 11)
C
obo
— 55 100 pF
V
CB
= -10V, f = 1MHz
Note:
11. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%.