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Diodes FZT788B User Manual

Fzt788b, Typical characteristics, Absolute maximum ratings

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B

SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995
FEATURES
* Low equivalent on-resistance; R

CE(sat)

93m

at 3A

* Gain of 300 at I

C

=2 Amps and Very low saturation voltage

APPLICATIONS
* Battery powered circuits
COMPLEMENTAY TYPE – FZT688B
PARTMARKING DETAIL – FZT788B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

-15

V

Collector-Emitter Voltage

V

CEO

-15

V

Emitter-Base Voltage

V

EBO

-5

V

Peak Pulse Current

I

CM

-8

A

Continuous Collector Current

I

C

-3

A

Power Dissipation at T

amb

=25°C

P

tot

2

W

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown Voltage V

(BR)CBO

-15

V

I

C

=-100

µ

A

Collector-Emitter Breakdown Voltage V

(BR)CEO

-15

V

I

C

=-10mA*

Emitter-Base Breakdown Voltage

V

(BR)EBO

-5

V

I

E

=-100

µ

A

Collector Cut-Off Current

I

CBO

-0.1

µ

A

V

CB

=-10V

Emitter Cut-Off Current

I

EBO

-0.1

µ

A

V

EB

=-4V

Collector-Emitter Saturation

Voltage

V

CE(sat)

-0.15

-0.25

-0.45

-0.5

V

V

V

I

C

=-0.5A, I

B

=-2.5mA*

I

C

=-1A, I

B

=-5mA*

I

C

=-2A, I

B

=-10mA*

I

C

=-3A, I

B

=-50mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-0.9

V

I

C

=-1A, I

B

=-5mA*

Base-Emitter Turn-On Voltage

V

BE(on)

-0.75

V

I

C

=-1A, V

CE

=-2V*

Static Forward Current Transfer

Ratio

h

FE

500

400

300

150

1500

I

C

=-10mA, V

CE

=-2V*

I

C

=-1A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

I

C

=-6A, V

CE

=-2V*

Transition Frequency

f

T

100

MHz

I

C

=-50mA, V

CE

=-5V

f=50MHz

Input Capacitance

C

ibo

225

pF

V

EB

=-0.5V, f=1MHz

Output Capacitance

C

obo

25

pF

V

CB

=-10V, f=1MHz

Switching Times

t

on

t

off

35

400

ns

ns

I

C

=-500mA, I

B1

=-50mA

I

B2

=-50mA, V

CC

=-10V

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

2%

Spice parameter data is available upon request for this device

FZT788B

C

C

E

3 - 244

-55°C

+25°C

+100°C

+100°C

+25°C

-55°C

0.01

0.1

1

10

0.8

0.6

0

1.6

0.01

0.1

1

10

0.01

0.1

1

10

1.0
0.8
0.6

0.4

0

0.2

1.6
1.4
1.2

0.01

0.1

1

10

1.0
0.8

0.6
0.4

0

0.2

1.6
1.4
1.2

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

I

+

-

Collector Current (Amps)

V

- (V

ol

ts

)

V

CE(sat)

v I

C

I

+

-

Collector Current (Amps)

V

- (V

olt

s)

I

+

-

Collector Current (Amps)

I

+

-

Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

I

+

-

Collector Current (Amps)

V

BE(on)

v I

C

h

- N

orm

alise

d

Gain

V

- (V

olt

s)

1200

900

600

h

- T

ypic

al

Gain

T

amb

=25°C

-55°C

+25°C

+100°C

+175°C

0

0

V

CE

=2V

0.01

0.1

1

10

1.0
0.8
0.6
0.4

0

0.2

1.6
1.4
1.2

V

- (V

olt

s)

-55°C

+25°C

+100°C

+175°C

I

C

/I

B

=200

I

C

/I

B

=10

I

C

/I

B

=200

I

C

/I

B

=100

1.8

1.4
1.2

1.0

0.4

0.2

I

C

/I

B

=200

V

CE

=2V

0.8

0.6

0

1.6

1.8

1.4
1.2

1.0

0.4

0.2

300

1

0.1

Safe Operating Area

V

CE

- Collector Emitter Voltage (V)

10

100

1s

DC

100ms

10ms

100

µ

s

1ms

1

0.01

0.1

10

FZT788B

3 - 245