Diodes FZT1147A - Manual (Page 2)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL
VALUE
UNIT CONDITIONS.
MIN. TYP. MAX.
Collector-Base
Breakdown Voltage V
(BR)CBO
-15 -35 V I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage V
CES
-12 -25 V I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage V
CEO
-12 -25 V I
C
=-10mA *
Collector-Emitter
Breakdown Voltage V
CEV
-12 -25 V I
C
=-100
µ
A, V
EB
=+1V
Emitter-Base Breakdown
Voltage V
(BR)EBO
-5 -8.5 V I
E
=-100
µ
A
Collector Cut-Off Current I
CBO
-0.3 -100 nA V
CB
=-12V
Emitter Cut-Off Current I
EBO
-0.3 -100 nA V
EB
=-4V
Collector Emitter Cut-Off
Current I
CES
-0.3 -100 nA V
CE
=-10V
Collector-Emitter
Saturation Voltage V
CE(sat)
-25
-70
-90
-115
-250 -50
-110
-130
-170
-400 mV
mV
mV
mV
mV I
C
=-0.1A, I
B
=-1.0mA*
I
C
=-0.5A, I
B
=-2.5mA*
I
C
=-1A, I
B
=-6mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-5A, I
B
=-50mA*
Base-Emitter
Saturation Voltage V
BE(sat)
-950 -1050 mV I
C
=-5A, I
B
=-50mA*
Base-Emitter Turn-On
Voltage V
BE(on)
-905 -1000 mV I
C
=-5A, V
CE
=-2V*
Static Forward Current
Transfer Ratio h
FE
270
250
200
150
90
450
400
340
245
145
50
850
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
I
C
=-20A, V
CE
=-2V*
Transition Frequency f
T
115 MHz I
C
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance C
cb
80 pF VCB=-10V, f=1MHz
Switching Times t
on
150 ns I
C
=-4A, I
B
=-40mA,
V
CC
=-10V
t
off
220 ns I
C
=-4A, I
B
=
±
40mA,
V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%.
FZT1147A