Diodes FMMTL618 - Manual (Page 2)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V
(BR)CBO
60 105 V I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage V
(BR)CEO
20 30 V I
C
=10mA*
Emitter-Base
Breakdown Voltage V
(BR)EBO
5 8.5 V I
E
=100
µ
A
Collector Cut-Off Current I
CBO
10 nA V
CB
=16V
Emitter Cut-Off Current I
EBO
10 nA V
EB
=4V
Collector Cut-Off Current I
CES
10 nA V
CE
=16V
Collector-Emitter
Saturation Voltage V
CE(sat)
18
80
130
170
260 35
160
200
280
350 mV
mV
mV
mV
mV I
C
=100mA, I
B
=10mA*
I
C
=500mA, I
B
=25mA*
I
C
=1A, I
B
=100mA*
I
C
=1.25A, IB=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage V
BE(sat)
1000 1100 mV I
C
=1.25A, I
B
=100mA*
Base-Emitter
Turn On Voltage V
BE(on)
850 1000 mV I
C
=1.25A, V
CE
=2V*
Static Forward
Current Transfer Ratio h
FE
200
300
250
200
100
50 400
440
400
300
190
100 I
C
=10mA, V
CE
=2V
I
C
=200mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
Transition Frequency f
T
195 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage C
obo
9 12 pF V
CB
=10V, f=1MHz
Switching times t
on
t
off
72
388 ns
ns I
C
=1A, V
CC
=10V
I
B1
=-I
B2
=10mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
FMMTL618