Diodes FCX1149A - Manual (Page 2)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL
VALUE
UNIT CONDITIONS.
MIN. TYP. MAX.
Collector-Base
Breakdown Voltage V
(BR)CBO
-30 V I
C
=-100 A
Collector-Emitter
Breakdown Voltage V
(BR)CES
-25 V I
C
=-100 A
Collector-Emitter
Breakdown Voltage V
(BR)CEO
-25 V I
C
=-10mA*
Collector-Emitter
Breakdown Voltage V
(BR)CEV
-25 V I
C
=-100 A, V
EB
=+1V
Emitter-Base
Breakdown Voltage V
(BR)EBO
-5 V I
E
=-100 A
Collector Cut-Off Current I
CBO
-0.3 -100 nA V
CB
=-24V
Emitter Cut-Off Current I
EBO
-0.3 -100 nA V
EB
=-4V
Collector Emitter Cut-Off
Current I
CES
-0.3 -100 nA V
CES
=-20V
Collector-Emitter
Saturation Voltage V
CE(sat)
-45
-100
-140
-200
-230 -80
-170
-240
-300
-350 mV
mV
mV
mV
mV I
C
=-0.1A, I
B
=-1mA*
I
C
=-0.5A, I
B
=-3mA*
I
C
=-1A, I
B
=-7mA*
I
C
=-3A, I
B
=-100mA*
I
C
=-4A, I
B
=-140mA*
Base-Emitter
Saturation Voltage V
BE(sat)
-930 -1050 mV I
C
=-3A, I
B
=-100mA*
Base-Emitter Turn-On
Voltage V
BE(on)
-840 -1000 mV I
C
=-3A, V
CE
=-2V*
Static Forward Current
Transfer Ratio h
FE
270
250
150
115 450
400
260
190
50
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-3.0A, V
CE
=-2V*
I
C
=-5.0A, V
CE
=-2V*
I
C
=-10.0A, V
CE
=-2V*
Transition Frequency f
T
135 MHz I
C
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance C
cb
50 pF V
CB
=-10V, f=1MHz
Switching Times t
on
150 ns I
C
=-4A, I
B
=-40mA,
V
CC
=-10V
t
off
270 ns I
C
=-4A, I
B
= 40mA,
V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
FCX1149A