Diodes DZT3150 User Manual
Dzt3150, New prod uc t features, Mechanical data
DZT3150
NPN SURFACE MOUNT TRANSISTOR
NEW PROD
UC
T
Features
•
Epitaxial Planar Die Construction
•
Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
•
Case: SOT-223
•
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.115 grams (approximate)
2
3
4
1
SOT-223
3
1
2,4
COLLECTOR
BASE
EMITTER
4
3
2
1
C
C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
7.0
V
Collector Current
I
C
5.0 A
Base Current
I
B
1.0 A
Power Dissipation
P
D
1 (Note 3)
2 (Note 4)
W
Thermal Resistance, Junction-to-Ambient
R
θJA
125 (Note 3)
62.5 (Note 4)
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V
(BR)CEO
25
⎯
⎯
V
I
C
= 10mA, I
B
= 0
Collector Cutoff Current
I
CBO
⎯
⎯
1.0
μA
V
CB
= 50V, I
E
= 0
Emitter Cutoff Current
I
EBO
⎯
⎯
1.0
μA
V
EB
= 7.0V, I
C
= 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
0.35
0.50
V
V
I
C
= 3.0A, I
B
= 150mA
I
C
= 4.0A, I
B
= 200mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
⎯
1.10
1.40
V
V
I
C
= 3.0A, I
B
= 150mA
I
C
= 4.0A, I
B
= 200mA
DC Current Gain
h
FE
250
150
50
⎯
500
⎯
⎯
⎯
I
C
= 500mA, V
CE
= 2.0V
I
C
= 2.0A,
V
CE
= 2.0V
I
C
= 5.0A,
V
CE
= 2.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
⎯
150
⎯
MHz I
C
= 50mA, V
CE
= 6.0V,
f = 200MHz
Output Capacitance
C
obo
⎯
⎯
50
pF
V
CB
= 10V, I
E
= 0, f = 1MHz
Note: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 3.
4. Device mounted on Polyimide PCB with a copper area of 1.8cm
2.
5. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%
DS30785 Rev. 4 - 2
1 of 4
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DZT3150
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