Diodes FCX1047A - Manual (Page 2)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V
(BR)CBO
35 V I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage V
CES
35 V I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage V
CEO
10 V I
C
=10mA
Collector-Emitter
Breakdown Voltage V
CEV
35 V I
C
=100
µ
A, V
EB
=1V
Emitter-Base
Breakdown Voltage V
(BR)EBO
5 V I
E
=100
µ
A
Collector Cut-Off Current I
CBO
0.3 10 nA V
CB
=20V
Emitter Cut-Off Current I
EBO
0.3 10 nA V
EB
=4V
Collector Emitter Cut-Off
Current I
CES
0.3 10 nA V
CES
=20V
Collector-Emitter
Saturation Voltage V
CE(sat)
25
50
140
160
220 40
70
200
240
350 mV
mV
mV
mV
mV I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=15mA*
I
C
=4A, I
B
=50mA*
I
C
=5A, I
B
=25mA*
Base-Emitter
Saturation Voltage V
BE(sat)
920 1000 mV I
C
=4A, I
B
=50mA*
Base-Emitter Turn-On
Voltage V
BE(on)
860 950 mV I
C
=4A, V
CE
=2V*
Static Forward Current
Transfer Ratio h
FE
280
290
300
200
200
60 430
440
450
350
330
110
1200
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance C
obo
85 pF V
CB
=10V, f=1MHz
Switching Times
t
on
130 ns I
C
=4A, I
B
=40mA, V
CC
=10V
t
off
230 ns I
C
=4A, I
B
=
±
40mA,
V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
FCX1047A