Diodes DXT3150 User Manual
Dxt3150, Features, Mechanical data
DXT3150
NPN SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
•
Case: SOT89-3L
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking & Type Code Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.072 grams (approximate)
NEW PROD
UC
T
SOT89-3L
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C
C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
25 V
Emitter-Base Voltage
V
EBO
7 V
Continuous Collector Current
I
C
5 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 3) @ T
A
= 25°C
P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 3) @T
A
= 25°C
R
θJA
125 °C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
Test
Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
V
(BR)CEO
25
⎯
⎯
V
I
C
= 10mA, I
B
= 0
Collector Cut-off Current
I
CBO
⎯
⎯
1.0
μA V
CB
= 50V, I
E
= 0
Emitter Cut-off Current
I
EBO
⎯
⎯
1.0
μA V
EB
= 7.0V, I
C
= 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
0.35
0.50
V
I
C
= 3.0A, I
B
= 150mA
I
C
= 4.0A, I
B
= 200mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
⎯
1.10
1.40
V
I
C
= 3.0A, I
B
= 150mA
I
C
= 4.0A, I
B
= 200mA
DC Current Gain
h
FE
250
150
50
⎯
550
⎯
⎯
⎯
I
C
= 500mA, V
CE
= 2.0V
I
C
= 2.0A, V
CE
= 2.0V
I
C
= 5.0A, V
CE
= 2.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
⎯
220
⎯
MHz
I
C
= 50mA, V
CE
= 6.0V,
f = 100MHz
Output Capacitance
C
obo
⎯
⎯
50 pF
V
CB
= 10V, I
E
= 0, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
DS31157 Rev. 3 - 2
1 of 3
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DXT3150
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