Diodes DSS4320T - Manual (Page 2)

DSS4320T
Document number: DS31621 Rev. 2 - 2
2 of 5
www.diodes.com
November 2008
© Diodes Incorporated
DSS4320T
NEW PROD
UC
T
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Cutoff Current I
CBO
⎯ ⎯ 100 nA V
CB
= 20V, I
E
= 0
⎯ ⎯ 50 μA V
CB
= 20V, I
E
= 0, T
A
= 150°C
Emitter-Base Cutoff Current I
EBO
⎯ ⎯
100 nA V
EB
= 5V, I
C
= 0
Collector-Base Breakdown Voltage V
(BR)CBO
20 ⎯ ⎯ V I
C
= 100 μA
Collector-Emitter Breakdown Voltage (Note 5) V (BR)CEO
20 ⎯ ⎯ V I C = 10mA
Emitter-Base Breakdown Voltage V
(BR)EBO
5 ⎯ ⎯ V I
E
= 100
μA
ON CHARACTERISTICS (Note 5)
DC Current Gain h
FE
220 ⎯ ⎯
⎯
V
CE
= 2V, I
C
= 0.1A
220 ⎯ ⎯ V
CE
= 2V, I
C
= 0.5A
220 ⎯ ⎯ V
CE
= 2V, I
C
= 1A
200 ⎯ ⎯
V
CE
= 2V, I
C
= 2A
150 ⎯ ⎯
V
CE
= 2V, I
C
= 3A
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ ⎯ 70
mV
I
C
= 0.5A, I
B
= 50mA
⎯ ⎯ 120 I C = 1A, I B = 50mA
⎯ ⎯ 230 I
C
= 2A, I
B
= 40mA
⎯ 70 210 I
C
= 2A, I
B
= 200mA
⎯ ⎯ 310 I C = 3A, I B = 300mA
Equivalent On-Resistance R
CE(SAT)
⎯ 35 105 m
Ω I
E
= 2A, I
B
= 200mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ ⎯ 1.1 V I
C
= 2A, I
B
= 40mA
⎯ ⎯ 1.2 V I
C
= 3A, I
B
= 300mA
Base-Emitter Turn-on Voltage V
BE(ON)
⎯ ⎯ 1.2 V V
CE
= 2V, I
C
= 1A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency f T
100 ⎯ ⎯ MHz
V CE = 5V, I C = 100mA,
f = 100MHz
Output Capacitance C
ob
⎯ ⎯ 35 pF V
CB
= 10V, f = 1MHz
Notes: 5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%.
0
0
P
, P
OW
E
R
DI
S
S
IP
A
T
ION
(W
)
D
T , AMBIENT TEMPERATURE ( C)
A
°
R = 209°C/W θJA
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
100
200
300
400
500
25 50 75 100 125 150
600
700
800
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
0.001
0.01
0.1
1
10
I,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(A
)
C
DC
Pw = 100ms
Pw = 10ms