Thermal characteristics, Electrical characteristics – Diodes GDZ3V9LP3 - GDZ8V2LP3 User Manual
Page 2
GDZ3V9LP3 - GDZ8V2LP3
Document number: DS35065 Rev. 15 - 2
2 of 4
August 2013
© Diodes Incorporated
GDZ3V9LP3 - GDZ8V2LP3
ADVAN
CE I
N
F
O
RM
ATI
O
N
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
T
A
= +25°C
P
D
250 mW
Thermal Resistance, Junction to Ambient Air (Note 5) T
A
= +25°C
R
θJA
500
C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Type
Number
Marking
Code
Zener Voltage Range
(Note 6)
Maximum
Reverse
Current
(Note 6)
V
Z
@ I
ZT
I
ZT
I
R
@
V
R
Nom (V)
Min (V)
Max (V)
mA
µA
V
GDZ3V9LP3 KJ
3.9
3.740
4.160
5 5
1.0
GDZ4V7LP3 KL
4.7
4.420
4.900
5 2.0
1.0
GDZ5V1LP3 KM
5.1
4.840
5.370
5 0.2
2.0
GDZ5V6LP3 KN
5.6
5.310
5.920
5 1.0
2.5
GDZ6V0LP3 KW
6.0
5.676
6.324
5 1.0
2.8
GDZ6V2LP3 KO
6.2
5.860
6.530
5 1.0
3.0
GDZ6V8LP3 KT
6.8
6.470
7.140
5 0.5
3.5
GDZ7V5LP3 KQ
7.5
7.060
7.840
5 0.5
4.0
GDZ8V2LP3 KX
8.2
7.760
8.640
5 0.5
5.0
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can
be found on our website at6. Short duration pulse test used to minimize self-heating effect.
0
0.05
0.10
0.15
0.20
0.25
0.30
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
Figure 1 Power Derating Curve
A
P
, P
O
WE
R
DI
SSI
P
A
T
IO
N
(W
)
D
Note 5
0.2
0.4
0.6
0.8
1.0
1.2
I
, INS
TAN
TANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(mA
)
F
0.01
0.1
1
10
100
1,000
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics
F
T = 25°C
A
T = -55°C
A
T = 50°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A