Es1a - es1g, Maximum ratings, Thermal characteristics – Diodes ES1A - ES1G User Manual
Page 2: Electrical characteristics

ES1A - ES1G
Document number: DS14001 Rev. 16 - 2
2 of 4
November 2011
© Diodes Incorporated
ES1A - ES1G
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
ES1A ES1B ES1C ES1D ES1G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
V
RRM
V
RWM
V
R
50 100 150 200 400 V
RMS Reverse Voltage
V
R(RMS)
35 70 105
140
280
V
Average Rectified Output Current
@ T
T
= 110
°C
I
O
1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
30 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Typical Thermal Resistance, Junction to Terminal (Note 4)
R
θJT
25
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
ES1A ES1B ES1C ES1D ES1G
Unit
Maximum Forward Voltage Drop
I
F
= 0.6A
I
F
= 1.0A
V
FM
0.90
0.92
⎯
1.25
V
Peak Reverse Current
at Rated DC Blocking Voltage (Note 5)
T
A
= 25
°C
T
A
= 125
°C
I
RM
5.0
200
μA
Maximum Reverse Recovery Time (Note 6)
t
rr
25 ns
Typical Total Capacitance (Note 7)
C
T
20 pF
Notes:
4. Unit mounted on PC board with 5.0 mm
2
(0.013 mm thick) copper pad as heat sink.
5. Short duration pulse test used to minimize self-heating effect.
6. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
0.5
25
50
75
100
125
150
175
I,
A
V
E
R
A
G
E
R
E
C
T
IF
IE
D
C
U
R
R
EN
T
(A
)
O
T , TERMINAL TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
T
°
1.0
1.5
0
Note 5
0.01
0.1
1.0
10
0
0.4
0.8
1.2
1.6
I,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F