Diodes DFLU1200 - Manual (Page 2)

DFLU1200
Document number: DS30601 Rev. 4 - 2
2 of 5
www.diodes.com
June 2013
© Diodes Incorporated
DFLU1200
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 3) V RRM
V
RWM
V
R
200 V
RMS Reverse Voltage V
R(RMS)
140 V
Average Rectified Output Current (see figure 4) I O
1.0 A
Thermal Characteristics
Characteristic Symbol Typ Max Unit
Power Dissipation (Note 5) @ T
A
= +25°C P
D
 1.0 W
Thermal Resistance Junction to Soldering Point (Note 6) R JS
 6 °C/W
Thermal Resistance Junction to Ambient (Note 5) @T
A
= +25°C R JA 116  °C/W
Thermal Resistance Junction to Ambient (Note 7) @T
A
= +25°C R JA 182  °C/W
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I FSM
30 A
Forward Voltage Drop @ I
F
= 0.6A
@ I
F
= 1.0A
V
FM
0.90
0.98
V
Peak Reverse Current @ T
A
= +25 C
at Rated DC Blocking Voltage (Note 4) @ T A = +100
C
I RM
5.0
200
µA
Reverse Recovery Time (Note 8) t
rr
25 ns
Typical Total Capacitance (f = 1MHz, V
R
= 4VDC) C
T
27 pF
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. Device mounted on 1" x 1", Polymide PCB; 2 oz. Cu pad layout as shown on Diodes Inc. suggested pad layout document AP02001.pdf.
6. Theoretical R JS calculated from the top center of the die straight down to the PCB cathode tab solder junction.
7. Device mounted on FR-4 PCB, 2 oz. Copper, minimum recommended pad layout pattern per http://www.diodes.com/datasheets/ap02001.pdf
8. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 7.