Single 2 input positive nand gate, New prod uc t electrical characteristics, Switching characteristics – Diodes 74AHC1G00 User Manual
Page 4

74AHC1G00
SINGLE 2 INPUT POSITIVE NAND GATE
74AHC1G00
Document number: DS35169 Rev. 1- 2
4 of 8
March 2011
© Diodes Incorporated
NEW PROD
UC
T
Electrical Characteristics
Symbol
Parameter
Test Conditions
V
CC
25ºC
-40ºC to 85ºC
-40ºC to 125ºC
Unit
Min
Typ.
Max
Min
Max
Min
Max
V
OH
High Level
Output Voltage
I
OH
= -50
μA
2V 1.9
2 1.9 1.9
V
3V 2.9
3 2.9 2.9
4.5V 4.4
4.5 4.4
4.4
I
OH
= -4mA
3V 2.58
2.48 2.40
I
OH
= -8mA
4.5V
3.94
3.8 3.70
V
OL
Low Level
Output Voltage
I
OL
= 50
μA
2V
0.1
0.1 0.1
V
3V
0.1
0.1 0.1
4.5V
0.1 0.1 0.1
I
OL
= 4mA
3V
0.36 0.44
0.55
I
OL
= 8mA
4.5V
0.36 0.44
0.55
I
I
Input Current
V
I
= 5.5 V or GND 0 to 5.5V
± 0.1
± 1
± 2
μA
I
CC
Supply Current
V
I
= 5.5V or GND
I
O
=0
5.5V
1 10
40
μA
C
I
Input
Capacitance
V
I
= V
CC
– or
GND
5.5V
2.0
10 10
10 pF
θ
JA
Thermal
Resistance
Junction-to-
Ambient
SOT25
(Note 4)
195
o
C/W
SOT353
430
θ
JC
Thermal
Resistance
Junction-to-
Case
SOT25
(Note 4)
58
o
C/W
SOT353
155
Notes:
4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
Switching Characteristics
V
CC
= 3.3V ± 0.3
(see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
25ºC
-40ºC to 85ºC
-40ºC to 125ºC
Unit
Min
Typ.
Max
Min
Max
Min
Max
t
pd
A or B
Y
C
L
=15pF
0.6 4.5 7.9 0.6
9.5 0.6 10.5
ns
C
L
=50pF
0.6 6.5 11.4 0.6
13.0 0.6 14.5
ns
V
CC
= 5V ± 0.5V
(see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
25ºC
-40ºC to 85ºC
-40ºC to 125ºC
Unit
Min
Typ.
Max
Min
Max
Min
Max
t
pd
A or B
Y
C
L
=15pF
0.6 3.5 5.5 0.6
6.5
0.6
7.0 ns
C
L
=50pF
0.6 4.9 7.5 0.6
8.5
0.6
9.5 ns