Diodes 74HC32 - Manual (Page 4)

74HC32
Document number: DS35324 Rev. 3 - 2
4 of 9
www.diodes.com
January 2013
© Diodes Incorporated
74HC32
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Test Conditions V
CC
T
A
= -40°C to +85°C T
A
= -40°C to +125°C
Unit
Min Max Min Max
V
IH
High-level
Input Voltage
2.0V 1.5 1.5
V 4.5V 3.15 3.15
6.0V 4.2 4.2
V
IL
Low-level
input voltage
2.0V 0.5 0.5
V 4.5V 1.35 1.35
6.0V 1.8 1.8
V
OH
High-level
Output Voltage
I
OH
= -20μA 2.0V 1.9 1.9
V
I
OH
= -20μA 4.5V 4.4 4.4
I
OH
= -20μA 6.0V 5.9 5.9
I
OH
= -4.0mA 4.5V 3.84 3.7
I
OH
= -5.2mA 6.0V 5.34 5.2
V
OL
Low -level
Output Voltage
I
OL
= 20μA 2.0V 0.1 0.1
V
I
OL
= 20μA 4.5V 0.1 0.1
I
OL
= 20μA 6.0V 0.1 0.1
I
OL
= 4mA 4.5V 0.33 0.44
I
OL
= 5.2mA 6.0V 0.33 0.44
I
I
Input Current V
I
=GND to 5.5V 6.0V ±1 ±1 μA
I
CC
Supply Current V
I
= GND or V
CC,
I
O
=0 6.0V 20 40 μA
Switching Characteristics
Symbol Parameter
Test
Conditions
V
CC
T
A
= +25°C -40°C to +85°C -40°C to +125°C
Unit
Min Typ Max Max Max
t
PD
Propagation Delay
A
N
to Y
N
Figure 1
C
L
= 50 pF
2.0V — 25 90 115 135
ns 4.5V — 9 18 23 27
6.0V — 7 15 20 23
t
t
Transition Time
Figure 1
C
L
= 50 pF
2.0V — 19 75 95 110
ns 4.5V — 7 15 19 22
6.0V — 6 13 16 19
Operating Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Parameter Test Conditions
V
CC
= 6V
Unit
Typ
C
pd
Power Dissipation
Capacitance per Gate
f = 1MHz 20 pF
C
I
Input Capacitance V
I
= V
CC
– or GND 4 pF