Electrical characteristics, Package characteristics – Diodes 74LVC2G04 User Manual
Page 4
74LVC2G04
Document number: DS35160 Rev. 5 - 2
4 of 12
October 2013
© Diodes Incorporated
NEW PROD
UC
T
74LVC2G04
Electrical Characteristics
Symbol
Parameter
Test Conditions
V
CC
-40°C to +85°C
-40°C to +125°C
Min
Max
Min
Max
Unit
V
OH
High-Level Output
Voltage
I
OH
= -100μA
1.65V to 5.5V
V
CC
– 0.1
V
CC
– 0.1
V
I
OH
= -4mA
1.65V
1.2
0.95
I
OH
= -8mA
2.3V
1.9
1.7
I
OH
= -16mA
3V
2.4
1.9
I
OH
= -24mA
2.3
2.0
I
OH
= -32mA
4.5V
3.8
3.4
V
OL
Low-Level Output
Voltage
I
OL
= 100μA
1.65V to 5.5V
0.1
0.1
V
I
OL
= 4mA
1.65V
0.45
0.70
I
OL
= 8mA
2.3V
0.3
0.45
I
OL
= 16mA
3V
0.4
0.60
I
OL
= 24mA
0.55
0.80
I
OL
= 32mA
4.5V
0.55
0.80
I
I
Input Current
V
I
= 5.5V or GND
0 to 5.5V
± 5
± 20
μA
I
OFF
Power Down Leakage
Current
V
I
or V
O
= 5.5V
0
± 10
± 20
μA
I
CC
Supply Current
V
I
= 5.5V or GND
I
O
= 0
1.65V to 5.5V
10
40
μA
ΔI
CC
Additional Supply
Current
Input at V
CC
-0.6V
3V to 5.5V
500
5000
μA
Package Characteristics
(All typical values are at V
CC
= 3.3V, T
A
= 25°C.)
Symbol
Parameter
Package
Conditions
Min
Typ
Max
Unit
C
I
Input Capacitance
Typical of all packages
Vcc = 3.3V
V
I
= V
CC
– or GND
3.5
pF
θ
JA
Thermal Resistance
Junction-to-Ambient
SOT26
(Note 6)
204
°C/W
SOT363
371
X2-DFN1410-6
430
X2-DFN1409-6
450
X2-DFN1010-6
510
θ
JC
Thermal Resistance
Junction-to-Case
SOT26
(Note 6)
52
°C/W
SOT363
143
X2-DFN1410-6
190
X2-DFN1409-6
225
X2-DFN1010-6
250
Note:
6. Test condition for SOT26, SOT363, X2-DFN1410-6, X2-DFN1409-6 and X2-DFN1010 -6: Device mounted on FR-4 substrate PC board, 2oz
copper with minimum recommended pad layout.