Diodes AH278 - Manual (Page 5)

5
Nov. 2009 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH AH278
Parameter Symbol Test Condition Min Typ Max Unit
Low Supply Voltage V
CE
V
CC
=5V, I
O
=100mA 0.1 0.3 V
Output Saturation Voltage V
SAT
1 I
O
=500mA 0.5 0.8 V
Output Saturation Voltage V
SAT
2 I
O
=300mA 0.25 0.5 V
Output Leakage Current I
OL
V
DO
,V
DOB
=24V 0.1 10
µA
Supply Current I
CC
V
CC
=24V, Output Open 12.5 16 mA
Output Rise Time tr R
L
=820 Ω, C
L
=20pF 3.0 10 µs
Output Fall Time tf R
L
=820 Ω, C
L
=20pF 0.3 1.5
µs
Switch Time Differential ∆t R
L
=820 Ω, C
L
=20pF 3.0 10
µs
Output Zener Breakdown Voltage V
ZO
60 V
(T
A
=25 o C, V
CC
=24V, unless otherwise specified)
Electrical Characteristics
Parameter Symbol Grade Min Typ Max Unit
Operating Point B
OP
A 10 70 Gauss
B 100 Gauss
Releasing Point B
RP
A -70 -10 Gauss
B -100 Gauss
Hysteresis B
HYS
80 Gauss
Magnetic Characteristics
(T
A
=25
o
C)
V
DO
(V)
High
Low
B
HYS
V
SAT
0
S N
B
RP
B
OP
Off-state
On-state
Turn off Turn on
Magnetic Flux Density (Gauss)