Diodes AP2114 - Manual (Page 10)

Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
10
Electrical Characteristics (Continued)
AP2114-1.8 Electrical Characteristics (Note 2)
(V
IN
=2.8V, C
IN
=4.7 μF (Ceramic), C
OUT
=4.7 μF (Ceramic), Typical T
A
= 25°C, Bold typeface applies over -40 O C≤T
A
≤85 O C
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage V
OUT
V
IN
=2.8V, 1mA ≤ I
OUT
≤ 30mA
V
OUT
×98.5%
1.8
V
OUT
×101.5%
V
Maximum Output Current I
OUT(MAX)
V
IN
=2.8V, V
OUT
=1.773V to 1.827V 1.0 A
Load Regulation
△ V
OUT
/V
OUT
I △
OUT
V
IN
=2.8V, 1mA ≤ I
OUT
≤1A 0.2 1.0 %/A
Line Regulation
△ V
OUT
/V
OUT
V △
IN
2.8V≤V
IN
≤6V, I
OUT
=30mA -0.1 0.02 0.1 %/V
Dropout Voltage V
DROP
I
OUT
=1.0A 500 700 mV
Quiescent Current I
Q
V
IN
=2.8V, I
OUT
=0mA 60 75 μA
Power Supply Rejection
Ratio
PSRR
Ripple 1Vp-p
V
IN
=2.8V,
I
OUT
=100mA
f=100Hz 68
dB
f=1KHz 68
Output Voltage
Temperature Coefficient △ V
OUT
/V
OUT
T △
I
OUT
=30mA, T
A
=-40°C to 85°C ±30 ppm/°C
Short Current Limit I
SHORT
V
OUT
=0V 50 mA
RMS Output Noise V
NOISE
10Hz ≤ f ≤100kHz (No load) 30 μV
RMS
V
EN
High Voltage V
IH
Enable logic high, regulator on 1.5
V
V
EN
Low Voltage V
IL
Enable logic low, regulator off 0.4
Standby Current I
STD
V
IN
=2.8V, V
EN
in OFF mode 0.01 1.0 μA
Start-up Time t
S
No Load 20 μs
EN Pull Down Resistor
R
PD
3.0 M Ω
V
OUT
Discharge Resistor
R
DCHG
Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature
T
OTSD
160
°C
Thermal Shutdown
Hysteresis
T
HYOTSD
25
Thermal Resistance
(Junction to Case)
θ
JC
SOIC-8 74.6
°C /W
PSOP-8 43.7
SOT-223 50.9
TO-252-2 (1) /(3) /(4) 35
TO-263-3 22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at T
A
=25 °C . Over temperature specifications guaranteed by design only.