Recommended operating conditions, Electrical characteristics – Diodes AP2145/ AP2155 User Manual
Page 3

AP2145/ AP2155
Document number: DS32031 Rev. 3 - 2
3 of 13
March 2013
© Diodes Incorporated
AP2145/ AP2155
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min
Max
Unit
V
IN
Input voltage
2.7
5.5
V
I
OUT
Output Current
0
500
mA
V
IL
EN Input Logic Low Voltage
0
0.8
V
V
IH
EN Input Logic High Voltage
2.0
V
IN
V
T
A
Operating Ambient Temperature
-40
85
C
Electrical Characteristics
(@T
A
= +25°C, V
IN
= +5.0V, unless otherwise specified.)
Symbol Parameter
Test
Conditions
Min
Typ.
Max
Unit
V
UVLO
Input UVLO
R
LOAD
= 1k
Ω
1.6 1.9 2.5 V
I
SHDN
Input Shutdown Current
Disabled, OUT = open
0.5
1
µA
I
Q
Input Quiescent Current
Enabled, OUT = open
45
70
µA
I
LEAK
Input Leakage Current
Disabled, OUT grounded
-1
1
µA
I
REV
Reverse Leakage Current
Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
1 µA
R
DS(ON)
Switch On-Resistance
V
IN
= 5V, I
OUT
= 0.5A, -40°C
≤ T
A
≤ +85°C
MSOP-8EP
90
140
m
Ω
SO-8
95
140
m
Ω
V
IN
= 3.3V, I
OUT
= 0.5A, -40°C
≤ T
A
≤ +85°C
120
160
m
Ω
I
SHORT
Short-Circuit Current Limit
Enabled into short circuit, C
IN
=10µF, C
L
= 100µF
0.7 A
I
LIMIT
Over-Load Current Limit
V
IN
= 5V, V
OUT
= 4.5V, C
IN
=10µF, C
L
= 100µF,
-40°C
≤ T
A
≤ +85°C
0.6 0.8 1.0 A
I
TRIG
Current Limiting Trigger Threshold Output Current Slew rate (<100A/s), C
IN
= 10µF, C
L
= 22µF
1.0 A
T
SHORT
Short-Circuit Response Time
V
OUT
= 0V to I
OUT
= I
LIMIT
(short applied to output),
C
L
= 100µF
10 µs
V
IL
EN Input Logic Low Voltage
V
IN
= 2.7V to 5.5V
0.8
V
V
IH
EN Input Logic High Voltage
V
IN
= 2.7V to 5.5V
2 V
I
SINK
EN Input Leakage
V
EN
= 5V
1
µA
I
O-LEAK
Output Leakage Current
Disabled
1
µA
T
D(ON)
Output Turn-On Delay Time
C
L
= 1µF, R
LOAD
= 10
Ω
0.05 ms
T
R
Output Turn-On Rise Time
C
L
= 1µF, R
LOAD
= 10
Ω
0.6
1.5
ms
T
D(OFF)
Output Turn-Off Delay Time
C
L
= 1µF, R
LOAD
= 10
Ω
0.01 ms
T
F
Output Turn-Off Fall Time
C
L
= 1µF, R
LOAD
= 10
Ω
0.05
0.1 ms
R
FLG
FLG Output FET On-Resistance
V
IN
= 3.3V or 5V, C
IN
= 10µF, I
FLG
= 10mA
20
40
Ω
I
FLG
FLG Leakage Current
V
FLG
= 5V
1 µA
T
BlLANK
FLG Blanking Time
V
IN
= 3.3V or 5V, C
IN
= 10µF, C
L
= 100µF
4 7 15
ms
T
SHDN
Thermal Shutdown Threshold
Enabled, R
LOAD
= 1k
Ω
135
C
T
HYS
Thermal Shutdown Hysteresis
25
C
θ
JA
Thermal Resistance Junction-to-
Ambient
SO-8 (Note 5)
110
C/W
MSOP-8EP (Note 6)
60
C/W
Notes:
5. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
6. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer
and thermal vias to bottom layer ground plane.