Diodes AP9050 - Manual (Page 3)

AP9050
PROTECTION INTERFACE for PMICs with
INTEGRATED OVP CONTROL
AP9050
Document number: DS35283 Rev. 1 - 2
3 of 9
www.diodes.com
March 2011
© Diodes Incorporated
NEW PROD
UC
T
Absolute Maximum Ratings (Note 2, 3)
Symbol Parameter Rating Unit
V
IN
Supply Voltage −0.3 to 30 V
V
GS
Gate-to-Source Voltage ±12 V
I
Dpk
Drain Current, Peak (10µs pulse) 19 A
I
D
Drain Current, Continuous
(Note 4, Steady-State)
T
A
= 25ºC
T
A
= 85ºC
3.7
2.7
A
P
max
Total Power Dissipation @ T
A
= 25°C
(Note 3, 4)
750 mW
T
J
Junction Temperature Range −40 to +125 °C
T
J
Non-operating Temperature Range −55 to +150 °C
T
L
Maximum Lead Temperature for Soldering
Purposes
260 °C
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and
transporting these devices.
Notes: 2. Exceeding these ratings may damage the device.
3. Mounted on FR4 Board using 30 mm
2
, 2 oz Cu.
4. Dual die operation (equally −heated).
Thermal Resistance
Symbol Parameter Rating Unit
θ
JA
Junction to Ambient (Note 5) 132 °C/W
θ
JC
Junction to Case 13 °C/W
Note: 5. Test condition for DFN2020-6: Mounted on FR4 Board using 30 mm
2
, 2 oz Cu.
Recommended Operating Conditions (Note 6)
Symbol Parameter Min Max Unit
V
IN
Supply Voltage 3 30 V
T
A
Operating Ambient Temperature Range −40 +85 °C
Note: 6. The device function is not guaranteed outside of the recommended operating conditions.