Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes D5V0L4B5SO User Manual
Page 2
D5V0L4B5SO
Document number: DS
35572
Rev. 5 – 2
2 of 5
January 2012
© Diodes Incorporated
D5V0L4B5SO
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Conditions
Peak Pulse Power Dissipation
P
PP
84 W
8/20
μs, Per Fig. 2
Peak Pulse Current
I
PP
6 A
8/20
μs, Per Fig. 2
ESD Protection – Contact Discharge
V
ESD_Contact
±30 kV
Standard
IEC
61000-4-2
ESD Protection – Air Discharge
V
ESD_Air
±30 kV
Standard
IEC
61000-4-2
Thermal Characteristics
Characteristic Symbol
Value
Unit
Package Power Dissipation (Note 5)
P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
417
°C/W
Operating Junction Temperature Range
T
J
-65 to +150
°C
Storage Temperature Range
T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Working Voltage
V
RWM
-
−
5.0 V
-
Breakdown Voltage
V
BR
6 7 8 V
I
R
= 1.0mA
Reverse Leakage Current (Note 6)
I
R
- 10
100 nA
V
RWM
= 5V
Clamping Voltage (Note 4)
V
CL
-
7.0 9.0 V
I
PP
= 1A, t
p
= 8/20
μs
-
8.7 10.7 V
I
PP
= 3A, t
p
= 8/20
μs
-
10.5 12.0
V
I
PP
= 5A, t
p
= 8/20
μs
-
11.5 14.0
V
I
PP
= 6A, t
p
= 8/20
μs
Differential Resistance
R
DIF
- 0.2 -
Ω
I
R
= 1.0A, t
p
= 8/20
μs
Channel Input Capacitance
C
T
- 15 20 pF
V
IN
= 0V, f = 1MHz
(Channel to Pin 2)
Notes:
4. Measured from channel to pin 2; Non-repetitive current pulse per Fig. 2.
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect
0
25
50
75
100
125
150
175
200
100
75
50
25
0
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Pulse Derating Curve
A
P
EA
K
P
U
LS
E D
E
R
A
T
IN
G
IN
%
O
F
PEA
K POW
E
R OR
CURRENT
0
t, TIME ( s)
Fig. 2 Pulse Waveform
μ
20
40
60
100
50
0
I
, PE
AK P
U
L
S
E
C
URRENT
(
%
I
)
Pp
p
P