Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes D5V0L2B3T User Manual
Page 2

D5V0L2B3T
Document number: DS35571 Rev. 5 - 2
2 of 4
January 2012
© Diodes Incorporated
D5V0L2B3T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Conditions
Peak Pulse Power Dissipation
P
PP
84 W
8/20
μs, Per Fig. 1
Peak Pulse Current
I
PP
6 A
8/20
μs, Per Fig. 1
ESD Protection – Contact Discharge
V
ESD_Contact
±30 kV
Standard
IEC
61000-4-2
ESD Protection – Air Discharge
V
ESD_Air
±30 kV
Standard
IEC
61000-4-2
Thermal Characteristics
Characteristic Symbol
Value
Unit
Package Power Dissipation (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
625
°C/W
Operating Junction Temperature Range
T
J
-65 to +150
°C
Storage Temperature Range
T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Working Voltage
V
RWM
-
- 5.0 V
-
Breakdown Voltage
V
BR
6 7 8 V
I
R
= 1.0mA
Reverse Leakage Current (Note 6)
I
R
- 10
100 nA
V
RWM
= 5V
Clamping Voltage (Note 4)
V
CL
-
7.0 9.0 V
Ipp = 1A, t
p
= 8/20
μs
-
8.7 10.7 V
Ipp = 3A, t
p
= 8/20
μs
-
10.5 12.0
V
Ipp = 5A, t
p
= 8/20
μs
-
11.5 14.0
V
Ipp = 6A, t
p
= 8/20
μs
Differential Resistance
R
DIF
- 0.2 -
Ω
I
R
= 1A, t
p
= 8/20
μs
Channel Input Capacitance
C
T
- 15 20 pF
V
IN
= 0 V, f = 1MHz
(Channel to Pin 3)
Notes:
4. Measured from pin 1 to 3 or pin 2 to 3; Non-repetitive current pulse per Fig. 1.
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
0
t, TIME ( s)
Fig. 1 Typical 8 x 20µs Pulse Waveform
μ
20
40
60
100
50
0
I
, PE
AK P
U
L
S
E
C
URRENT
(
%
I
)
Pp
p
P
0
25
25
50
75
100
125
150
P
EAK
P
U
L
SE DE
R
A
T
IN
G
IN
%
O
F
PEAK
POW
E
R OR CURRE
NT
T , AMBIENT TEMPERATURE (°C)
Fig. 2 Pulse Derating Curve
A
50
75
0
100
175 200