Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes D5V0L1B2T User Manual
Page 2
D5V0L1B2T
Document number: DS35597 Rev. 5 - 2
2 of 4
June 2012
© Diodes Incorporated
D5V0L1B2T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Conditions
Peak Pulse Power Dissipation
P
PP
84 W
8/20
μs, per Fig. 2
Peak Pulse Current
I
PP
6 A
8/20
μs, per Fig. 2
ESD Protection – Contact Discharge
V
ESD_Contact
±30
kV
IEC 61000-4-2 Standard
ESD Protection – Air Discharge
V
ESD_Air
±30
kV
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol
Value
Unit
Package Power Dissipation (Note 6)
P
D
150 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
- - 5 V
-
Channel Leakage Current (Note 7)
I
RM
- 10
100 nA
V
RWM
= 5V
Clamping Voltage, Positive Transients
V
CL
-
-
-
-
7.0
8.7
10.5
11.5
9.0
10.7
12.0
14.0
V
I
PP
= 1A, tp = 8/20
μS
I
PP
= 3A, tp = 8/20
μS
I
PP
= 5A, tp = 8/20
μS
I
PP
= 6A, tp = 8/20
μS
Breakdown Voltage
V
BR
6 7 8 V
I
R
= 1mA
Differential Resistance
R
DIF
-
0.2 -
Ω
I
R
= 1A, tp = 8/20
μS
Channel Input Capacitance
C
IN
- 15 20 pF
V
R
= 0V, f = 1MHz
Notes:
6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
7. Short duration pulse test used to minimize self-heating effect.
0
50
25
50
75
100
125
150
P
EAK
P
U
LS
E
D
E
R
A
T
IN
G
%
O
F
P
EAK
PO
W
E
R O
R
CUR
RENT
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
0
100
25
75
175 200
0
t, TIME ( s)
Fig. 2 Pulse Waveform
μ
20
40
60
100
50
0
I
, PE
AK P
U
L
S
E
CURRENT
(
%
I
)
Pp
p
P