Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes D5V0L1B2S9 User Manual
Page 2

D5V0L1B2S9
Document number: DS36458 Rev. 6 - 2
2 of 5
March 2014
© Diodes Incorporated
D5V0L1B2S9
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Conditions
Peak Pulse Power Dissipation
P
PP
84 W
8/20μs, per Figure 1
Peak Pulse Current
I
PP
6 A
8/20μs, per Figure 1
ESD Protection – Contact Discharge
V
ESD_Contact
±30
kV
IEC 61000-4-2 Standard
ESD Protection – Air Discharge
V
ESD_Air
±30
kV
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol
Value
Unit
Package Power Dissipation (Note 5)
P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
500 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
— — 5 V
—
Channel Leakage Current (Note 6)
I
RM
—
10 100 nA
V
RWM
= 5V
Clamping Voltage, Positive Transients
V
CL
—
7.0 9.0
V
I
PP
= 1A, t
p
= 8/20μS
— 8.7 10.7
I
PP
= 3A, t
p
= 8/20μS
—
10.5 12.0
I
PP
= 5A, t
p
= 8/20μS
—
11.5 14.0
I
PP
= 6A, t
p
= 8/20μS
Breakdown Voltage
V
BR
6 7 8 V
I
R
= 1mA
Differential Resistance
R
DIF
—
0.2 — Ω
I
R
= 1A, t
p
= 8/20μS
Channel Input Capacitance
C
IN
—
15 20 pF
V
R
= 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
0
t, TIME (µs)
Figure 1 Pulse Waveform
20
40
60
100
50
0
Peak Value I
pp
Half Value I /2
pp
8x20 Waveform
as defined by R.E.A.
I
, PEA
K PUL
SE
CURREN
T
(
%
I
)
Pp
p
P
10
11
12
13
14
15
16
17
18
0
1
2
3
4
5
6
V , REVERSE VOLTAGE (V)
Figure 2 Typical Total Capacitance vs. Reverse Voltage
R
C
, T
O
TAL
C
A
P
A
C
IT
A
N
C
E (
p
F)
T
f = 1MHz