D5v0f4u6s, Maximum ratings, Thermal characteristics – Diodes D5V0F4U6S User Manual
Page 2: Electrical characteristics

D5V0F4U6S
Document number: DS35495 Rev. 4 - 2
2 of 4
June 2013
© Diodes Incorporated
D5V0F4U6S
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Current
I
PP
3.0 A
8/20µs, Figure 3
ESD Protection – Contact Discharge
V
ESD_Contact
±8 kV
Standard IEC 61000-4-2
ESD Protection – Air Discharge
V
ESD_Air
±15 kV
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
625 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Working Voltage
V
RWM
—
—
5.5
V
—
Reverse Current (Note 6)
I
R
— — 200 nA
V
R
= 5.5V
Reverse Breakdown Voltage
V
BR
6.0 — — V
I
R
= 1mA
Reverse Clamping Voltage, Positive Transients
(Note 7)
V
CL
— 10 12 V
I
PP
= 1A, t
p
= 8/20
μs
Dynamic Resistance
R
DYN
— 1.0 —
Ω
I
R
= 1A, t
p
= 8/20
μs
Capacitance (Note 8)
C
T
— 0.4
0.65 pF
V
R
= 2.5V, f = 1MHz
— 0.5 — pF
V
R
= 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
7. Clamping voltage value is based on an 8x20µs peak pulse current (I
pp
) waveform.
8. Measured from any CH to GND.
9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
follow
0
125
175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
25
100
50
75
150
25
75
125
200
175
Note 5
0
50
25
50
75
100
125
150
P
EAK
P
U
L
SE DE
R
A
T
IN
G
%
O
F
P
EAK
PO
W
E
R O
R
CUR
RENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200