Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes D5V0F4U10MR User Manual
Page 2
D5V0F4U10MR
Document number: DS36285 Rev. 1 - 2
2 of 4
September 2013
© Diodes Incorporated
D5V0F4U10MR
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Conditions
Peak Pulse Current
I
PP
3 A
8/20µs, Per Figure 3
ESD Protection – Contact Discharge
V
ESD_Contact
±8 kV
Standard IEC 61000-4-2
ESD Protection – Air Discharge
V
ESD_Air
±15 kV
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
500
mW
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
250 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Working Voltage
V
RWM
—
—
5.5
V
—
Reverse Current (Note 6)
I
R
— — 200 nA
V
R
= 5.5V
Reverse Breakdown Voltage
V
BR
6.0 — — V
I
R
= 1mA
Reverse Clamping Voltage, Positive Transients
(Note 7)
V
CL
— 10 12 V
I
PP
= 1A, t
p
= 8/20μs
Dynamic Resistance
R
DYN
— 1.0 — Ω
I
R
= 1A, t
p
= 8/20μs
Capacitance (Note 8)
C
T
— 0.4 0.65 pF
V
R
= 2.5V, f = 1MHz
— 0.5 — pF
V
R
= 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
7. Clamping voltage value is based on an 8x20µs peak pulse current (I
pp
) waveform.
8. Measured from any CH to GND.
9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
followi
0
125
175
150
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DISS
IP
A
T
IO
N (
m
W
)
D
25
100
50
75
150
50
300
Note 5
200
250
350
400
450
500
550
600
0
50
25
50
75
100 125
150
P
EAK
P
U
L
SE DE
R
A
T
IN
G
%
O
F
P
EAK
PO
W
E
R O
R
CUR
RENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200