Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes D58V0M4U8MR User Manual
Page 2
D58V0M4U8MR
Document number: DS36183 Rev. 2 - 2
2 of 5
April 2014
© Diodes Incorporated
D58V0M4U8MR
NEW PROD
UC
T
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.), Per Element
Characteristic Symbol
Value
Unit
Conditions
Peak Pulse Power Dissipation
P
PP
2700
W
8/20µs, Per Figure 1
Peak Pulse Current
I
PP
24
A
8/20µs, Per Figure 1
ESD Protection – Contact Discharge
V
ESD_Contact
±30
kV
IEC 61000-4-2 Standard
ESD Protection – Air Discharge
V
ESD_Air
±30
kV
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol
Value
Unit
Package Power Dissipation (Note 5)
P
D
1.0 W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
125 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
— — 58 V
—
Channel Leakage Current (Note 6)
I
RM
— — 0.2 μA
V
RWM
= 58V
Breakdown Voltage
V
BR
64.4 — 71.2 V
I
R
= 1mA
Clamping Voltage
V
CL
— — 100 V
I
PP
= 24A, t
p
= 8/20μS
Channel Input Capacitance
C
T
— 55 — pF
V
R
= 50V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.
0
t, TIME ( s)
Figure 1 Pulse Waveform
20
40
60
100
50
0
Peak Value I
pp
Half Value I /2
pp
8x20 Waveform
as defined by R.E.A.
I
, PE
AK P
U
LS
E
CURREN
T
(
%
I
)
Pp
p
P
0
10
20
30
40
50
60
70
80
90
100
110
0
25
50
75
100
125
150
175
T (°C)
Figure 2 Peak Power Dissipation vs.
Initial
J
Junction Temperature
P
(T
I
N
IT
IA
L)
/ °
C
)
PP
J
P
P
J
P
(T
IN
IT
IA
L
=
2
5