Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes D55V0M1B2WS User Manual
Page 2
D55V0M1B2WS
Document number: DS36160 Rev. 3 - 2
2 of 4
June 2013
© Diodes Incorporated
D55V0M1B2WS
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Conditions
Peak Pulse Power Dissipation
P
PP
200
W
8/20µs, Per Figure 2
Peak Pulse Current
I
PP
2
A
8/20µs, Per Figure 2
ESD Protection – Contact Discharge
V
ESD_Contact
±25
kV
IEC 61000-4-2 Standard
ESD Protection – Air Discharge
V
ESD_Air
±30
kV
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol
Value
Unit
Package Power Dissipation (Note 5)
P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
500
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
— — 55 V
-
Channel Leakage Current (Note 6)
I
RM
— — 100 nA
V
RWM
= 55V
Clamping Voltage
V
CL
—
—
—
—
86
100
V
I
PP
= 1A, t
p
= 8/20μS
I
PP
= 2A, t
p
= 8/20μS
Breakdown Voltage
V
BR
57 — — V
I
R
= 1mA
Channel Input Capacitance
C
T
— 14 25 pF
V
R
= 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.
0
120
160
200
250
200
150
50
40
80
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
, P
O
WE
R
DI
SSI
P
A
T
IO
N
(m
W
)
D
Note 5
0
t, TIME ( s)
Figure 2 Pulse Waveform
20
40
60
100
50
0
I
, PE
AK P
U
LS
E
CURRENT
(
%
I
)
Pp
p
P