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Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes D1213A-02SR User Manual

Page 2

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D1213A-02SR

Document number: DS32151 Rev. 12 - 2

2 of 4

www.diodes.com

August 2012

© Diodes Incorporated

D1213A-02SR

NEW PROD

UC

T




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit Conditions

Operating Supply Voltage

V

P

- V

N

6.0 V

DC Voltage at any Channel Input

(V

N

– 0.5) to (V

P

+ 0.5)

V

Peak Pulse Current

I

PP

5

A

8/20µs, Per Figure 2

ESD Protection – Contact Discharge

V

ESD_Contact

±8 kV

Standard

IEC

61000-4-2

ESD Protection – Air Discharge

V

ESD_Air

±15 kV

Standard

IEC

61000-4-2

Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

400

mW

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

310

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-65 to +150

°C


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Operating Supply Voltage

V

P

3.3 5.5 V

Operating Supply Current (Note 6)

I

P

— — 8.0 µA

(V

P

– V

N

) = 3.3V

Channel Leakage Current (Note 6)

I

R

— ±0.1

±1.0 µA

V

P

= 5V, V

N

= 0V

Reverse breakdown voltage

V

BR

6.0 — — V

I

R

= 1mA

Clamping Voltage, Positive Transients

V

CL1

10.0 — V

I

PP

= 1A, t

p

= 8/20

μs

Clamping Voltage, Negative Transients

V

CL2

— -1.7 — V

I

PP

= -1A, t

p

= 8/20

μs

Forward Voltage for Top Diode

V

FD1

0.60 0.80 0.95 V

I

F

= 8mA, CH1 to V

P

or CH2 to V

P

Forward Voltage for Bottom Diode

V

FD2

0.60 0.80 0.95 V

I

F

= 8mA, V

N

to CH1 or V

N

to CH2

Dynamic Resistance

R

DYN

— 0.9 —

I

PP

= 1A, t

p

= 8/20

μs

Channel Input Capacitance

C

T

— 0.85 1.2 pF

V

IN

= 1.65V, V

P

= 3.3V,

V

N

= 0V, f = 1MHz

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Measured from CH1 to V

N

or CH2 to V

N

.

8. Measured from V

P

to V

N

.

9. For information on the impact of Diodes' USB2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/_files/products_appnote_pdfs/AN77.pdf.



0

25

50

75

100

125

150

175

200

100

75

50

25

0

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Pulse Derating Curve

A

P

EA

K

P

U

LS

E D

E

R

A

T

IN

G

IN

%

O

F

PEA

K POW

E

R OR

CURRENT

0

t, TIME ( s)

Fig. 2 Pulse Waveform

μ

20

40

60

100

50

0

I

, PE

AK P

U

L

S

E

CURRENT

(

%

I

)

Pp

p

P