Diodes BSS84 - Manual (Page 3)

BSS84
Document number: DS30149 Rev. 20 - 2
3 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BSS84
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
D
ISSI
P
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
400
0
-600
-500
-400
-300
-200
-100
0 -2 -1 -5 -4 -3
I,
D
R
AI
N-
S
O
U
R
C
E
C
U
R
R
EN
T
(mA
)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
DS
0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0 -2 -3 -4 -1 -8 -7 -6 -5
I,
D
R
AI
N
-C
U
R
R
EN
T
(A
)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 3 Drain-Current vs. Gate-Source Voltage
GS
0
1
2
4
5
3
6
8
7
10
9
0 -1 -2 -3 -4 -5
V , GATE-SOURCE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
T = 25 C
A
°
T = 125 C
A
°
R
, NOR
M
A
L
IZ
ED DR
AIN-
SOU
RCE
ON-
R
E
S
IST
A
NCE
(
)
DS
(O
N
)

0
3
6
9
12
15
-50 -25 0 25 50 125 100 75 150
T , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R
, O
N
-R
ESI
ST
AN
CE
(
)
DS
(O
N)

0.0
5.0
10.0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0
I , DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
D
15.0
20.0
25.0
R
, ON-
R
ESI
S
T
A
NCE (
)
DS
(O
N)
