Diodes BSS127 - Manual (Page 2)

BSS127
Document number: DS35476 Rev. 6 - 2
2 of 6
www.diodes.com
January 2013
© Diodes Incorporated
BSS127
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
600 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
50
40
mA
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
70
55
mA
Continuous Drain Current (Note 5) V
GS
= 5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
45
35
mA
Continuous Drain Current (Note 6) V
GS
= 5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
65
50
mA
Pulsed Drain Current @ T
SP
= +25°C (Notes 7) I
DM
0.16 A
Thermal Characteristics
Characteristic Symbol Value Units
Power Dissipation, @T
A
= +25°C (Note 5) P
D
0.61 W
Thermal Resistance, Junction to Ambient @ T
A
= +25°C (Note 5) R
θJA
204 °C/W
Power Dissipation, @T
A
= +25°C (Note 6) P
D
1.25 W
Thermal Resistance, Junction to Ambient @ T
A
= +25°C (Note 6) R
θJA
100 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
600 — — V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 0.1 µA V
DS
= 600V, V
GS
= 0V
Gate-Body Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
3 — 4.5 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
— 80 160
Ω
V
GS
= 10V, I
D
= 16mA
— 95 190 V
GS
= 5.0V, I
D
= 16mA
Forward Transfer Admittance |Y
fs
| — 76 — mS V
DS
= 10V, I
D
= 16mA
Diode Forward Voltage V
SD
— — 1.5 V V
GS
= 0V, I
S
= 16mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 21.8 —
pF V
DS
= 25V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
— 2.2 —
Reverse Transfer Capacitance C
rss
— 0.3 —
Total Gate Charge Q
g
— 1.08 —
nC
V
GS
= 10V, V
DD
= 300V,
I
D
= 0.01A
Gate-Source Charge Q
gs
— 0.08 —
Gate-Drain Charge Q
gd
— 0.50 —
Turn-On Delay Time t
D(on)
— 5.0 — ns
V
DD
= 300V, V
GS
= 10V,
R
GEN
= 6Ω,
I
D
= 10mA
Turn-On Rise Time t
r
— 7.2 — ns
Turn-Off Delay Time t
D(off)
— 28.7 — ns
Turn-Off Fall Time t
f
— 168 — ns
Reverse Recovery Time T
rr
— 131 — ns V
R
=300 V, I
F
=0.016 A,
di/dt = 100A/µs Reverse Recovery Charge Q
rr
— 32 — nC
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.