Diodes BS250F - Manual

SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
PARTMARKING DETAIL – MX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-45 V
Continuous Drain Current at T
amb
=25°C I
D
-90 mA
Pulsed Drain Current I
DM
-1.6 A
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-45 -70 V I
D
=-100 µ A, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1 -3.5 V I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
-20 nA V
GS
=-15V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5. µ A V
DS
=-25V, V
GS
=0V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
9 14 Ω V
GS
=-10V,I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
90 mS V
DS
=-10V,I
D
=-200mA
Input Capacitance (2) C
iss
25 pF V
DS
=-10V, V
GS
=0V,
f=1MHz
Turn-On Delay Time (2)(3) t
d(on)
10 ns
V
DD
≈ -25V, I
D
=-200mA Rise Time (2)(3) t
r
10 ns
Turn-Off Delay Time (2)(3) t
d(off)
10 ns
Fall Time (2)(3) t
f
10 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
BS250F
D
G
S
SOT23
3 - 55