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Diodes BS250P User Manual

Bs250p, P-channel enhancement mode vertical dmos fet

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P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET

ISSUE 2 – SEPT 93
FEATURES
* 45 Volt V

DS

* R

DS(on)

=14

REFER TO ZVP2106A FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

V

DS

-45

V

Continuous Drain Current at T

amb

=25°C

I

D

-230

mA

Pulsed Drain Current

I

DM

-3

A

Gate-Source Voltage

V

GS

±

20

V

Power Dissipation at T

amb

=25°C

P

tot

700

mW

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Drain-Source

Breakdown Voltage

BV

DSS

-45

V

I

D

=-100

µ

A, V

GS

=0V

Gate-Source

Threshold Voltage

V

GS(th)

-1

-3.5

V

I

D

=-1mA, V

DS

=V

GS

Gate Body Leakage

I

GSS

-20

nA

VGS=-15V, V

DS

=0V

Zero Gate Voltage

Drain Current

I

DSS

-500

nA

V

GS

=0V, V

DS

=-25V

Static Drain-Source

on-State Resistance (1)

R

DS(on)

14

V

GS

=-10V, I

D

=-200mA

Forward

Transconductance (1)(2)

g

fs

150

mS

V

DS

=-10V, I

D

=-200mA

Input Capacitance (2)

C

iss

60

pF

V

GS

=0V, V

DS

=-10V

f=1MHz

Turn-On Time (2)(3)

t

(on)

20

ns

V

DD

-25V, I

D

=-500mA

Turn-Off Time (2)(3)

t

(off)

20

ns

(1) Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

2% (2) Sample test

(3) Switching times measured with a 50

source impedance and <5ns rise time on a pulse generator

BS250P

3-28

D

G

S

E-Line

TO92 Compatible