Diodes BS250P - Manual

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 45 Volt V
DS
* R
DS(on)
=14 Ω
REFER TO ZVP2106A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-45 V
Continuous Drain Current at T
amb
=25°C I
D
-230 mA
Pulsed Drain Current I
DM
-3 A
Gate-Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-45 V I
D
=-100 µ A, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
-1 -3.5 V I
D
=-1mA, V
DS
=V
GS
Gate Body Leakage I
GSS
-20 nA VGS=-15V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
-500 nA V
GS
=0V, V
DS
=-25V
Static Drain-Source
on-State Resistance (1)
R
DS(on)
14 Ω V
GS
=-10V, I
D
=-200mA
Forward
Transconductance (1)(2)
g
fs
150 mS V
DS
=-10V, I
D
=-200mA
Input Capacitance (2) C
iss
60 pF V
GS
=0V, V
DS
=-10V
f=1MHz
Turn-On Time (2)(3) t
(on)
20 ns V
DD
≈ -25V, I
D
=-500mA
Turn-Off Time (2)(3) t
(off)
20 ns
(1) Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2% (2) Sample test
(3) Switching times measured with a 50 Ω source impedance and <5ns rise time on a pulse generator
BS250P
3-28
D
G
S
E-Line
TO92 Compatible