Diodes BSS123 SOT23 - Manual

SOT23
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996 ✪
PARTMARKING DETAIL – SA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
100 V
Drain-Gate Voltage V
DGR
100 V
Continuous Drain Current at T
amb
=25°C I
D
170 mA
Pulsed Drain Current I
DM
680 mA
Gate-Source Voltage V
GS
±
20 V
Peak Gate-Source Voltage V
GSM
±
20 V
Power Dissipation at T
amb
=25°C P
tot
360 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BV
DSS
100 V I
D
=0.25mA, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
0.8 2.2 2.8 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
10 50 nA V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage
Drain Current I
DSS
1
2 15
60
10
µ
A
µ
A
nA
V
DS
=100V, V
GS
=0V
V
DS
=100V, V
GS
=0V, T=125°C (2)
V
DS
=20V, V
GS
=0V
Static Drain-Source
On-State Resistance (1) R
DS(on)
5 6
Ω
V
GS
=10V, I
D
=100mA
Forward
Transconductance(1)(2) g
fs
80 120 mS V
DS
=25V, I
D
=100mA
Input Capacitance (2) C
iss
20 pF
V
DS
=25V, V
GS
=0V, f=1MHz
Common Source
Output Capacitance (2) C
oss
9 pF
Reverse Transfer
Capacitance (2) C
rss
4 pF
Turn-On Delay Time (2)(3) t
d(on)
10 ns
V
DD
≈
30V, I
D
=280mA
Rise Time (2)(3) t
r
10 ns
Turn-Off Delay Time (2)(3) t
d(off)
15 ns
Fall Time (2)(3) t
f
25 ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
For typical characteristics graphs see ZVN3310F datasheet.
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