Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes BS870 User Manual
Page 2: Bs870
BS870
Document number: DS11302 Rev. 18 - 2
2 of 5
August 2013
© Diodes Incorporated
BS870
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
1.0M
V
DGR
60 V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 6)
Continuous
I
D
250 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 6)
P
D
300 mW
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
80
V
V
GS
= 0V, I
D
= 100
A
Zero Gate Voltage Drain Current
I
DSS
0.5
µA
V
DS
= 25V, V
GS
= 0V
Gate-Body Leakage
I
GSS
10
nA
V
GS
=
15V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0
2.0
3.0
V
V
DS
= V
GS
, I
D
= 250
A
Static Drain-Source On-Resistance
R
DS (ON)
3.5
5.0
V
GS
= 10V, I
D
= 0.2A
On-State Drain Current
I
D(ON)
0.5
1.0
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
22
50
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
11
25
pF
Reverse Transfer Capacitance
C
rss
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
2.0
20
ns
V
ES
= 10V, R
L
= 150
,
V
DS
= 10V, R
D
= 100
Turn-Off Delay Time
t
D(OFF)
5.0
20
ns
Notes:
6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on
our website at
7. Short duration pulse test used to minimize self-heating effect.