Diodes 2N7002K - Manual (Page 4)

2N7002K
Document number: DS30896 Rev. 14 - 2
4 of 6
www.diodes.com
August 2013
© Diodes Incorporated
2N7002K
NEW PROD
UC
T
0
T , CHANNEL TEMPERATURE ( C)
Fig. 7
CH
°
Static Drain-Source On-State Resistance
vs. Channel Temperature
I
, REVE
RSE D
R
AIN
CURRENT
(
A
)
DR
1
I
,
REVERS
E
DRAI
N CURRE
NT
(
A
)
DR
1
I , DRAIN CURRENT (A)
D
Fig.10 Forward Transfer Admittance vs. Drain Current
|Y
|,
F
O
R
WA
R
D
T
R
A
N
SF
E
R
ADM
IT
T
A
N
C
E (
S
)
fs
0.001
0.01
0.1
1
0.1 1 10 100
Fig. 11 Safe Operation Area
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
Single Pulse
J(max)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
0
1
2
3
4
5
6
7
8
9
10
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,000 0.0001
Single Pulse
R
= 240 C/W
R = r * R
T - T = P * R




JA
JA(t) (t) JA
J A JA(t)

P
, PE
AK T
R
ANS
IENT P
O
IW
ER
(
W
)
(P
K
)