Diodes BS170F - Manual

SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
FEATURES
* 60Volt V
DS
* R
DS(ON)
= 5 Ω
PARTMARKING DETAIL – MV
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous Drain Current at T
amb
=25°C I
D
0.15 mA
Pulsed Drain Current I DM 3 A
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BV
DSS
60 90 V I
D
=100 µ A, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
0.8 3 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
10 nA V
GS
=15V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
0.5 µ A V
DS
=25V, V
GS
=0V
Static Drain-Source On-State
Resistance (1) R
DS(on)
5 Ω V
GS
=10V, I
D
=200mA
Forward Transconductance
(1)(2) g
fs
200 mS V
DS
=10V, I
D
=200mA
Input Capacitance (2) C iss 60 pF V DS =10V, V GS =0V,
f=1MHz
Turn-On Delay Time (2)(3) t
d(on)
10 ns
V
DD
≈ -15V, I
D
=600mA
Turn-Off Delay Time (2)(3) t
d(off)
10 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs refer to ZVN3306F datasheet.
BS170F
D
G
S
SOT23
3 - 54