Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes 2N7002VC/VAC User Manual
Page 2

2N7002VC/VAC
Document number: DS30639 Rev. 6 - 2
2 of 4
October 2011
© Diodes Incorporated
2N7002VC/VAC
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
≤ 1.0MΩ
V
DGR
60 V
Gate-Source Voltage (Note 5)
Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 5)
Continuous
I
D
280 mA
Drain Current (Note 5) Pulsed
I
DM
1.5 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Total Power Dissipation
P
D
150 mW
Thermal Resistance, Junction to Ambient
R
θJA
833 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60 70
⎯
V
V
GS
= 0V, I
D
= 10
μA
Zero Gate Voltage Drain Current
@ T
C
= 25°C
@ T
C
= 125°C
I
DSS
⎯
⎯
1.0
500
µA V
DS
= 60V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯
⎯
±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTIC (Note 6)
Gate Threshold Voltage
V
GS(th)
1.0
⎯
2.5 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
⎯
7.5
13.5
Ω
V
GS
= 5V, I
D
= 0.05A,
V
GS
= 10V, I
D
= 0.5A, T
j
= 125°C
On-State Drain Current
I
D(ON)
0.5 1.0
⎯
A
V
GS
= 10V,
V
DS
= 7.5V
Forward Transconductance
g
FS
80
⎯
⎯
mS V
DS
= 10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
⎯
50 pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
⎯
⎯
25 pF
Reverse Transfer Capacitance
C
rss
⎯
⎯
5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
⎯
⎯
20 ns
V
DD
= 30V, I
D
= 0.2A, R
L
= 150
Ω,
V
GEN
= 10V, R
GEN
= 25
Ω
Turn-Off Delay Time
t
D(OFF)
⎯
⎯
20 ns
Notes:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at