Diodes 2N7002T - Manual (Page 2)

2N7002T
Document number: DS30301 Rev. 14 - 2
2 of 5
www.diodes.com
April 2012
© Diodes Incorporated
2N7002T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
60 V
Drain-Gate Voltage R
GS
≤ 1.0MΩ
V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V GSS
±20
±40
V
Drain Current (Note 5) Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
d
150 mW
Thermal Resistance, Junction to Ambient R θJA 833 °C/W
Operating and Storage Temperature Range T
j,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60 ⎯ ⎯ V V
GS
= 0V, I
D
= 10
μA
Zero Gate Voltage Drain Current @ T
C
= 25°C
@ T
C
= 125°C
I
DSS
⎯ ⎯
1.0
500
µA V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage I
GSS
⎯ ⎯ ±10 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1.0 ⎯ 2.0 V V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance @ T
j
= 25°C
@ T
j
= 125°C
R
DS (ON)
⎯
2.0
4.4 7.5
13.5
Ω
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current I D(ON)
0.5 1.0 ⎯ A V GS = 10V, V DS = 7.5V
Forward Transconductance g FS
80 ⎯ ⎯ mS V
DS =10V, I D = 0.2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C iss
⎯ 22 50 pF
V DS = 25V, V GS = 0V, f = 1.0MHz Output Capacitance C oss
⎯ 11 25 pF
Reverse Transfer Capacitance C
rss
⎯ 2.0 5.0 pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
t
D(ON)
⎯ 7.0 20 ns V
DD
= 30V, I
D
= 0.2A,
R
L
= 150
Ω, V
GEN
= 10V, R
GEN
= 25
Ω
Turn-Off Delay Time t
D(OFF)
⎯ 11 20 ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.