Diodes 2N7002 - Manual (Page 3)

2N7002
Document number: DS11303 Rev. 33 - 2
3 of 5
www.diodes.com
July 2013
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2N7002
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
I
, DRAI
N-
S
OURCE
CURREN
T
(
A
)
D
0
1
2
3
4
5
0 0.2
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
R
, NORM
A
L
IZ
ED
DRAIN-
S
OU
RCE
ON-
R
E
S
IS
T
A
NCE (
)
DS
(O
N)

1.0
1.5
2.0
2.5
3.0
-55 -30 -5 20 45 70 95 120 145
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs. Junction Temperature
j
°
V = 10V,
I = 200mA
GS
D
R
, ST
A
T
IC
DRAIN
-S
OURCE
ON-
RES
IS
T
A
NCE
(
)
DS
(O
N)

0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
I = 50mA
D
I = 500mA
D
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18
R
, NO
R
M
A
L
IZ
ED
DR
AI
N-
SO
UR
CE
ON-RE
S
IS
T
A
N
C
E
(
)
DS
(O
N
)

0
2
1
4
3
0 0.2 0.4 0.6 0.8 1
V
G
A
T
E S
O
U
R
C
E
C
U
R
R
E
N
T
(V
)
GS
,
I , DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics
D
6
5
8
7
10
9
0
50
100
150
200
250
300
350
0 25 50 75 100 125 150 175 200
P
,
P
O
WE
R
D
ISSI
P
A
T
IO
N (
m
W
)
d
T , AMBIENT TEMPERATURE ( C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
A
°
400