Diodes DCX (LO-R1) U - Manual (Page 3)

DS30425 Rev. 5 - 2
3 of 4
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DCX (LO-R1) U
© Diodes Incorporated
Electrical Characteristics PNP Section
@T
A
= 25°C unless otherwise specified
R1, R2 Types
NEW PROD
UC
T
Characteristic Symbol Min Typ Max Unit Test Condition
DCX122LU
DCX142JU
V
l(off)
-0.3
-0.3
⎯ ⎯ V V
CC
= -5V, I
O
= -100 μA
Input Voltage
DCX122LU
DCX142JU
V
l(on)
⎯ ⎯
-2.0
-2.0
V
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
Output Voltage V
O(on)
⎯ ⎯ -0.3V V I
O
/I
l
= -5mA/-0.25mA
Input Current
DCX122LU
DCX142JU
I
l
⎯ ⎯
-28
-13
mA V
I
= -5V
Output Current I
O(off)
⎯ ⎯ -0.5 μA V
CC
= -50V, V
I
= 0V
DC Current Gain
DCX122LU
DCX142JU
G
l
56
56
⎯ ⎯ ⎯ V
O
= -5V, I
O
= -10mA
Gain-Bandwidth Product* f
T
⎯ 200 ⎯ MHz V
CE
= -10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics PNP Section
@T
A
= 25°C unless otherwise specified
R1 Only Types
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-50 ⎯ ⎯ V I
C
= -50 μA
Collector-Emitter Breakdown Voltage BV
CEO
-40 ⎯ ⎯ V I
C
= -1mA
Emitter-Base Breakdown Voltage DCX122TU
DCX142TU
BV
EBO
-5 ⎯ ⎯ V
I
E
= -50 μA
I
E
= -50 μA
Collector Cutoff Current I
CBO
⎯ ⎯ -0.5 μA V
CB
= -50V
Emitter Cutoff Current
DCX122TU
DCX142TU
I
EBO
⎯
⎯
⎯
-0.5
-0.5
μA V
EB
= -4V
Collector-Emitter Saturation Voltage V
CE(sat)
⎯ ⎯ -0.3 V I
C
= -5mA, I
B
= -0.25mA
DC Current Transfer Ratio
DCX122TU
DCX142TU
h
FE
100
100 250
250 600
600
⎯ I
C
= -1mA, V
CE
= -5V
Gain-Bandwidth Product* f
T
⎯ 200 ⎯ MHz V
CE
= -10V, I
E
= 5mA, f = 100MHz
* Transistor - For Reference Only
-50 0 50 100
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
°
150
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N
(m
W
)
d
(150mW per element must not be exceeded).