Electrical characteristics – Diodes DDA (xxxx) U User Manual
Page 3
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DDA(xxxx)U
Document number: DS30346 Rev. 11 - 2
3 of 7
November 2013
© Diodes Incorporated
DDA(xxxx)U
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(DDA113TU & DDA143TU & DDA114TU only)
Symbol
Min Typ Max Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-50
V
I
C
= -50μA
Collector-Emitter Breakdown Voltage
BV
CEO
-50
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-5
V
I
E
= -50μA
Collector Cutoff Current
I
CBO
-0.5
μA
V
CB
= -50V
Emitter Cutoff Current
I
EBO
-0.5
μA
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(sat)
-0.3 V
I
C
/I
B
= -2.5mA / -0.25mA DDA143TU
I
C
/I
B
= -1mA / -0.1mA DDA114TU
I
C
/I
B
= -10mA / -1mA DDA113TU
DC Current Transfer Ratio
h
FE
100
160
250
—
600
—
I
C
= -1mA, V
CE
= -5V
I
C
= -1mA, V
CE
= -5V DDA143TUQ
Input Resistor (R
1
) Tolerance
R
1
-30
+30 %
Gain-Bandwidth Product (Note 7)
f
T
250
MHz
V
CE
= -10V, I
E
= 5mA, f = 100MHz
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Input Voltage
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
V
l(off)
-0.5
-0.5
-0.3
-0.5
-0.5
-1.1
-1.1
-1.1
V
V
CC
= -5V, I
O
= -100µA
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
V
l(on)
-1.9
-1.9
1.9
-3.0
-3.0
-1.4
-1.1
-3.0
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -2mA
V
O
= -0.3, I
O
= -1mA
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -10mA
Output Voltage
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
V
O(on)
-0.1 -0.3 V
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -10mA / -0.5mA
Input Current
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
I
l
-0.36
-0.18
-0.88
-3.6
-0.88
mA
V
I
= -5V
Output Current
I
O(off)
-0.5
μA
V
CC
= -50V, V
I
= -0V
DC Current Gain
DDA124EU
DDA124EUQ
DDA144EU
DDA114YU
DDA123JU
DDA114EU
G
l
56
60
68
68
80
30
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -5mA
Input Resistor (R
1
) Tolerance
R
1
-30
+30 %
Resistance Ratio Tolerance
R
2
/R
1
-20
+20 %
Gain-Bandwidth Product
f
T
250
MHz
V
CE
= -10V, I
E
= -5mA, f = 100MHz
Note:
7. Transistor - For Reference Only