Diodes BCX41 User Manual
Bcx41, Sot23 npn silicon planar medium power transistor
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 OCTOBER 1995
✪
PARTMARKING DETAIL EK
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V
CES
125
V
Collector-Emitter Voltage
V
CEO
125
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
800
mA
Base Current
I
B
100
mA
Power Dissipation at T
amb
=25°C
P
TOT
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
I
CES
100
10
nA
µ
A
V
CE
=100V
V
CE
=100V, T
amb
=150°C
Collector Cut-Off
Current
I
CEX
10
75
µ
A
µ
A
V
CE
=100V,V
BE
=0.2V,T
amb
=85°C
V
CE
=100V,V
BE
=0.2V,
T
amb
=125°C
Emitter Cut-Off
Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.9
V
I
C
=300mA, I
B
=30mA *
Base-Emitter
Saturation Voltage
V
BE(sat)
1.4
V
I
C
=300mA, I
B
=30mA *
Static Forward
Current Transfer Ratio
h
FE
25
63
40
I
C
=10
0µ
A, V
CE
=1V
I
C
=100mA, V
CE
=1V *
I
C
=200mA, V
CE
=1V *
Transition Frequency f
T
100
MHz I
C
=10mA, V
CE
=5V
f =20MHz
Output Capacitance
C
obo
12
pF
V
CB
=10V, I
E
=I
e
=0, f =1MHz
* Measured under pulsed conditions. Pulse width = 300
µ
s. Duty cycle 2%
BCX41
1
3
2
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