Electrical characteristics, Bcw66h, A product line of diodes incorporated – Diodes BCW66H User Manual
Page 3
BCW66H
Document number: DS33003 Rev. 5 - 2
3 of 5
April 2013
© Diodes Incorporated
BCW66H
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CES
75 — — V
I
C
= 10µA
Collector-Emitter Breakdown Voltage
(base open) (Note 9)
BV
CEO
45 — — V
I
CEO
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 — — V
I
EBO
= 10µA
Collector-Emitter Cut-Off Current
I
CES
—
—
<1
—
20
20
nA
µA
V
CES
= 45V
V
CES
= 45V, T
A
= +150°C
Emitter-Base Cut-Off Current
I
EBO
— <1 20 nA
V
EBO
= 5.6V
ON CHARACTERISTICS (Note 9)
Static Forward Current Transfer Ratio
h
FE
80
180
250
100
—
—
350
—
—
—
630
—
—
I
C
= 100µA, V
CE
= 10V
I
C
= 10mA, V
CE
= 1V
I
C
= 100mA, V
CE
= 1V
I
C
= 500mA, V
CE
= 2V
Collector-Emitter Saturation Voltage
V
CE(sat)
—
—
—
—
0.3
0.7
mV
I
C
= 100mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(sat)
— — 2 V
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS (Note 9)
Transition Frequency
f
T
100 — — MHz
I
C
= 20mA, V
CE
= 10V,
f = 100MHz
Output Capacitance
C
obo
— 8 12 pF
V
CB
= 10V, f = 1MHz
Input Capacitance
C
ibo
— — 80 pF
V
CB
= -0.5V, f = 1MHz
Noise Figure
N
—
2
10
dB
I
C
= 0.2mA. V
CE
= 5V,
R
G
= 1K
Turn-On Time
t
on
— — 100 ns
I
C
= 150mA.
I
B1
= -I
B2
= 15mA
R
L
= 150
Turn-Off Time
t
off
— — 400 ns
Notes:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%