Diodes BC857BV User Manual
Features, Mechanical data, Maximum ratings
BC857BV
Document number: DS30433 Rev. 5 - 2
1 of 4
April 2009
© Diodes Incorporated
BC857BV
PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Die Construction
•
Complementary PNP Type Available (BC847BV)
•
Ultra-Small Surface Mount Package
•
Lead Free By Design/RoHS Compliant (Note 3)
•
"Green" Device (Notes 5 and 6)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SOT-563
•
Case Material: Molded Plastic, “Green” Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminal Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 2
•
Ordering Information: See Page 2
•
Weight: 0.003 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current
I
C
-100
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 2)
P
D
150
mW
Thermal Resistance, Junction to Ambient (Note 2)
R
θJA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 4)
V
(BR)CBO
-50
—
—
V
I
C
= 10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 4)
V
(BR)CEO
-45
—
—
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 4)
V
(BR)EBO
-5
—
—
V
I
E
= 1
μA, I
C
= 0
DC Current Gain (Note 4)
h
FE
220
290
475
—
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage (Note 4)
V
CE(SAT)
—
—
—
-100
-400
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage (Note 4)
V
BE(SAT)
—
—
-700
-900
—
—
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage (Note 4)
V
BE(ON)
-600
—
—
—
-750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current (Note 4)
I
CBO
—
—
—
—
-15
-4.0
nA
µA
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
Gain Bandwidth Product
f
T
100
—
—
MHz
V
CE
= -5.0V, I
C
= -10mA, f = 100MHz
Output Capacitance
C
OB
—
—
4.5
pF
V
CB
= -10V, f = 1.0MHz
Noise Figure
NF
—
—
10
dB
I
C
= -0.2mA, V
CE
= -5.0Vdc,
R
S
= 2.0K
Ω, f = 1.0KHz, BW = 200Hz
Notes:
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our websit6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View
Bottom View
Device Schematic (Note 1)
C
1
B
2
E
2
C
2
E
1
B
1