Diodes BC857BLP4 - Manual (Page 2)

BC857BLP4
Document number: DS31361 Rev. 5 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
BC857BLP4
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
-50 V
Collector-Emitter Voltage V
CEO
-45 V
Emitter-Base Voltage V
EBO
-5.0 V
Collector Current I C
-100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @T A = 25°C P D
250 mW
Thermal Resistance, Junction to Ambient Air (Note 4) @T A = 25°C R θJA 500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic (Note 5) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage V
(BR)CBO
-50 — — V I
C
= 10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-45 — — V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5 — — V I
E
= 1 μA, I
C
= 0
DC Current Gain h
FE
220 300 475 — V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage V
CE(SAT)
—
-90
-250
-300
-650
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V BE(SAT)
—
— -700
-850 —
—
mV
I C = -10mA, I B = -0.5mA
I C = -100mA, I B = -5.0mA
Base-Emitter Voltage V
BE(ON)
-600
—
-670
-710 -750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current I
CBO
—
— —
— -15
-4.0
nA
µA V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
Gain Bandwidth Product f
T
100 — — MHz
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
Collector-Base Capacitance C
CBO
— 3.0 — pF V
CB
= -10V, f = 1.0MHz
Notes: 4. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com
5. Short duration pulse test used to minimize self-heating effect.